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BDT41AF Dataheets PDF



Part Number BDT41AF
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDT41AF DatasheetBDT41AF Datasheet (PDF)

isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF ·Complement to Type BDT42F/42AF/42BF/42CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

  BDT41AF   BDT41AF



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isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF ·Complement to Type BDT42F/42AF/42BF/42CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT41F 80 BDT41AF 100 VCBO Collector-Base Voltage BDT41BF 120 BDT41CF 140 BDT41F 40 VCEO Collector-Emitter Voltage BDT41AF 60 BDT41BF 80 BDT41CF 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 6 ICM Collector Current-Peak 10 IB Base Current 3 PC Collector Power Dissipation TC=25℃ 32 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; IB= 0 BDT41CF VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V BDT41F VCE= 40V; VEB= 0 BDT41AF ICES Collector Cutoff Current BDT41BF VCE= 60V; VEB= 0 VCE= 80V; VEB= 0 BDT41CF VCE= 100V; VEB= 0 BDT 41/41A VCE= 30V; IB= 0 ICEO Collector Cutoff Current BDT41B/41C VCE= 60V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V MIN MAX UNIT 40 60 V 80 100 1.5 V 2.0 V 0.4 mA 0.2 mA 0.5 mA 30 15 75 3 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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