BDT42

isc Silicon PNP Power Transistors BDT42/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C ·Complement to Type BDT41/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT42 -80 BDT42A -100 VCBO Collector-Base Voltage V BDT42B -120 BDT42C -140 BDT42 -40 VCEO Collector-Emitter Voltage BDT42A -60 V BDT42B -80 BDT42C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -3 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT42 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT42A BDT42B IC= -30mA; IB= 0 BDT42C VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) ICES Base-Emitter On Voltage Col...