isc Silicon PNP Power Transistors
BDT42F/AF/BF/CF
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Em...
isc Silicon
PNP Power
Transistors
BDT42F/AF/BF/CF
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF
·Complement to Type BDT41F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDT42F
-80
VCBO
Collector-Base Voltage
BDT42AF BDT42BF
-100 -120
BDT42CF -140
BDT42F
-40
VCEO
Collector-Emitter Voltage
BDT42AF
-60
BDT42BF
-80
BDT42CF -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-6
ICM
Collector Current-Peak
-10
IB
Base Current
-3
PC
Collector Power Dissipation TC=25℃
32
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 6.3 ℃/W
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isc Silicon
PNP Power
Transistors
BDT42F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT42F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT42AF BDT42BF
IC= -30mA; IB= 0
BDT42CF
VCE(sat) Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -6A ; VCE= -4V
ICES
Colle...