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BDT61

NPN Transistor

Description

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL...

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