BDT61A

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C ·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT61 60 VCBO Collector-Base Voltage BDT61A 80 V BDT61B 100 BDT61C 120 BDT61 60 VCEO Collector-Emitter Voltage BDT61A 80 V BDT61B 100 BDT61C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Tj Junction Temperature 0.1 A 2 W 50 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-c Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX UNIT 2.5 ℃/W 62.5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistors BDT61/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT61 60 V(BR)CEO Collector-Emitter Breakdown Voltage BDT61A BDT61B IC= 30mA; IB= 0 80 100 V BDT61C 12...