isc Silicon NPN Darlington Power Transistors
BDT61/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Colle...
isc Silicon
NPN Darlington Power
Transistors
BDT61/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A; 100V(Min)- BDT61B; 120V(Min)- BDT61C
·Complement to Type BDT60/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT61
60
VCBO
Collector-Base Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
BDT61
60
VCEO
Collector-Emitter Voltage
BDT61A
80
V
BDT61B
100
BDT61C
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Tj
Junction Temperature
0.1
A
2 W
50
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-c Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
MAX UNIT 2.5 ℃/W 62.5 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistors
BDT61/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT61
60
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT61A BDT61B
IC= 30mA; IB= 0
80 100
V
BDT61C
12...