isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDT64F/AF/BF/CF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general purpose
amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT65F
60
VCER
Collector-Emitter Voltage
BDT65AF
80
BDT65BF 100
V
BDT65CF 120
BDT65F
60
VCEO
Collector-Emitter Voltage
BDT65AF
80
BDT65BF 100
V
BDT65CF 120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
39
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 5.7 ℃/W
BDT65F/AF/BF/CF
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isc Silicon
NPN Darlington Power
Transistor BDT65F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT65F
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDT65AF IC= 30mA ;IB=0
BDT65BF
BDT65CF
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 100mA
VBE(on) Base-Emitter On Voltage
IC= 5A ; VCE= 4V
VECF ICEO ICBO...
