BDT95F

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)- BDT91F; 80V(Min)- BDT93F; 100V(Min)- BDT95F ·Complement to Type BDT92F/94F/96F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT91F 60 VCBO Collector-Base Voltage BDT93F 80 BDT95F 100 VCEO Collector-Emitter Voltage BDT91F 60 BDT93F 80 BDT95F 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 10 ICM Collector Current-Peak 20 IB Base Current-Continuous 4 PC Collector Power Dissipation @ TC=25℃ 32 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.4 ℃/W BDT91F/93F/95F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDT91F/93F/95F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT91F BDT93F IC= 30mA ; IB= 0 BDT95F VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) ICBO ICEO Base-Emitter On Voltage Collector Cu...