BDT92F

isc Silicon PNP Power Transistor BDT92F/94F/96F DESCRIPTION ·DC Current Gain- hFE= 20~200@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT92F; -80V(Min)- BDT94F; -100V(Min)- BDT96F ·Complement to Type BDT91F/93F/95F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT92F -60 VCBO Collector-Base Voltage BDT94F -80 V BDT96F -100 BDT92F -60 VCEO Collector-Emitter Voltage BDT94F -80 V BDT96F -100 VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 32 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.4 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BDT92F/94F/96F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BDT92F BDT94F IC= -30mA ; IB= 0 BDT96F VCE(sat)-1 VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A Collector-Emitter Saturation Voltage IC= -10A; IB= -3.3A VBE(on) ICBO ICEO Base-Emit...