BDV67D

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications BDV67D ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 VCEO Collector-Emitter Voltage 150 UNIT V V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 16 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.625 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current IC= 10A ; VCE= 3V VCE= 1/2VCEOmax; IB= 0 ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3 A ; VCE= 3V COB Output Capa...