BDV93

isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 ·Complement to Type BDV92/94/96 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage BDV91 60 BDV93 80 V BDV95 100 VCEO Collector-Emitter Voltage BDV91 60 BDV93 80 V BDV95 100 VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current 7 A IE Emitter Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 14 A 100 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W BDV91/93/95 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDV91/93/95 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) BDV91 Collector-Emitter Sustaining Voltage BDV93 IC= 30mA ;IB=0 BDV95 Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation IC= 4A; IB= 0.4A IC= 10A; IB= 3.3A Base -Emitter Saturation Voltage IC= 4A; IB= 0...