BDW23

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 VCER Collector-Emitter Voltage V BDW23B 80 BDW23C 100 BDW23 45 BDW23A 60 VCEO Collector-Emitter Voltage V BDW23B 80 BDW23C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDW23/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW23/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW23 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW23A BDW23B IC= 50mA ;IB=0 60 80 V BDW23C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA 3 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 8mA 2.5 V VBE(on)-1 Base-Emitter On Voltage IC= 1A ; VCE= 3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC...