isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW23
45
BDW23A
60
VCER
Collector-Emitter Voltage
V
BDW23B
80
BDW23C
100
BDW23
45
BDW23A
60
VCEO
Collector-Emitter Voltage
V
BDW23B
80
BDW23C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
BDW23/A/B/C
isc website:www.iscsemi.com
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isc Silicon
NPN Darlington Power
Transistor
BDW23/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW23
45
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW23A BDW23B
IC= 50mA ;IB=0
60 80
V
BDW23C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA
2
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA
3
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 8mA
2.5
V
VBE(on)-1 Base-Emitter On Voltage
IC= 1A ; VCE= 3V
2.5
V
VBE(on)-2 Base-Emitter On Voltage
IC...