DatasheetsPDF.com

BDW23C Dataheets PDF



Part Number BDW23C
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDW23C DatasheetBDW23C Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 VCER Collector-Emitter Voltage V BDW23B 80 BDW23C 100 BDW23 45 BDW23A 60 VCEO Co.

  BDW23C   BDW23C



Document
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 VCER Collector-Emitter Voltage V BDW23B 80 BDW23C 100 BDW23 45 BDW23A 60 VCEO Collector-Emitter Voltage V BDW23B 80 BDW23C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDW23/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW23/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW23 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW23A BDW23B IC= 50mA ;IB=0 60 80 V BDW23C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA 2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA 3 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 8mA 2.5 V VBE(on)-1 Base-Emitter On Voltage IC= 1A ; VCE= 3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 6A ; VCE= 3V 3 V VECF C-E Diode Forward Voltage IF= 2A 1.8 V BDW23 VCE= 30V; IB= 0 ICEO Collector Cutoff Current BDW23A BDW23B VCE= 30V; IB= 0 VCE= 40V; IB= 0 0.5 mA BDW23C VCE= 50V; IB= 0 BDW23 VCB= 45V;IE= 0 ICBO Collector Cutoff Current BDW23A BDW23B VCB= 60V;IE= 0 VCB= 80V;IE= 0 0.2 mA BDW23C VCB= 100V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 2 mA hFE-1 DC Current Gain IC= 1A ; VCE= 3V 1000 hFE-2 DC Current Gain IC= 2A ; VCE= 3V 750 20000 hFE-3 DC Current Gain IC= 6A ; VCE= 3V 100 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BDW23B BDW23C BDW24


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)