BDW24C

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW24 -45 BDW24A -60 VCER Collector-Emitter Voltage V BDW24B -80 BDW24C -100 BDW24 -45 BDW24A -60 VCEO Collector-Emitter Voltage V BDW24B -80 BDW24C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.2 A 50 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ BDW24/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW24/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW24 -45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW24A BDW24B IC= -50mA ;IB=0 -60 -80 V BDW24C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA -2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA -3 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -8mA -2.5 V VBE(on)-1 Base-Emitter On Voltage IC= -1A ; VCE= -3V -2.5 V VBE(on)...