isc Silicon NPN Darlington Power Transistor
BDW42
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V...
isc Silicon
NPN Darlington Power
Transistor
BDW42
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min) ·High DC Current Gain
: hFE= 1000(Min) @IC= 5A ·Low Collector Saturation Voltage
: VCE(sat)= 2.0V(Max.)@ IC= 5.0A = 3.0V(Max.)@ IC= 10A
·Complement to Type BDW47 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.5
A
85
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.47 ℃/W
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isc Silicon
NPN Darlington Power
Transistor
BDW42
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
MIN TYP. MAX UNIT
100
V
2.0
V
3.0
V
3.0
V
ICBO
Collector Cutoff Current
VCB= 1...