BDW59

isc Silicon NPN Power Transistors DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59 ·Complement to Type BDW56/58/60 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in professional equipment such as telecommunication and etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage BDW55 45 BDW57 60 BDW59 100 VCER Collector-Emitter Voltage RBE= 1kΩ BDW55 45 BDW57 60 BDW59 100 VCEO Collector-Emitter Voltage BDW55 45 BDW57 60 BDW59 80 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 10 100 UNIT ℃/W ℃/W BDW55/57/59 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDW55/57/59 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage BDW55 BDW57 BDW59 VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current BDW55 ICBO Collector Cutoff Current BDW57 BDW59 IEBO Emitter Cutoff Current hFE-...