isc Silicon PNP Power Transistors
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= -45V- BDW56 = -60V- B...
isc Silicon
PNP Power
Transistors
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS)= -45V- BDW56 = -60V- BDW58 = -80V- BDW60
·Complement to Type BDW55/57/59 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in professional equipment such as
telecommunication and etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
BDW56 BDW58 BDW60
-45 -60 -100
VCER
Collector-Emitter Voltage RBE= 1kΩ
BDW56 BDW58 BDW60
-45 -60 -100
VCEO
Collector-Emitter Voltage
BDW56
-45
BDW58
-60
BDW60
-80
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-1.5
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3 12.5 150
Tstg
Storage Temperature Range
-65~150
UNIT V
V
V V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-a Thermal Resistance, Junction to Ambient
MAX 10 100
UNIT ℃/W ℃/W
BDW56/58/60
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistors
BDW56/58/60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW56
-45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDW58 IC= -10mA ;IB=0
-60
V
BDW60
-80
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
-0.5 V
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE...