isc Silicon NPN Darlington Power Transistor
BDW63/A/B/C/D
DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain...
isc Silicon
NPN Darlington Power
Transistor
BDW63/A/B/C/D
DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW63
45
VCBO
Collector-Base Voltage
BDW63A
60
BDW63B
80
V
BDW63C
100
BDW63D
120
BDW63
45
BDW63A
60
VCEO
Collector-Emitter Voltage
BDW63B
80
V
BDW63C
100
BDW63D
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.1
A
2 W
60
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
Rth j-c Thermal Resistance, Junction to Case
MAX 2.08 62.5
UNIT ℃/W ℃/W
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isc Silicon
NPN Darlington Power
Transistor
BDW63/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
CONDITIONS
BDW63
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW63A BDW63B IC= 30mA; IB=0 BDW63C
BDW63D
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation IC= 2A; IB= 12mA Saturatio...