BDW63D

isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min.)@ IC= 2A ·Complement to Type BDW64/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW63 45 VCBO Collector-Base Voltage BDW63A 60 BDW63B 80 V BDW63C 100 BDW63D 120 BDW63 45 BDW63A 60 VCEO Collector-Emitter Voltage BDW63B 80 V BDW63C 100 BDW63D 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 2 W 60 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW63/A/B/C/D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS BDW63 V(BR)CEO Collector-Emitter Breakdown Voltage BDW63A BDW63B IC= 30mA; IB=0 BDW63C BDW63D VCE(sat)-1 VCE(sat)-2 Collector-Emitter Voltage Collector-Emitter Voltage Saturation IC= 2A; IB= 12mA Saturatio...