BDW64B

isc Silicon PNP Darlington Power Transistor BDW64/A/B/C/D DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW64 -45 VCBO Collector-Base Voltage BDW64A -60 BDW64B -80 V BDW64C -100 BDW64D -120 BDW64 -45 BDW64A -60 VCEO Collector-Emitter Voltage BDW64B -80 V BDW64C -100 BDW64D -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.1 A 2 W 60 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-c Thermal Resistance, Junction to Case MAX 2.08 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW64 V(BR)CEO Collector-Emitter Breakdown Voltage BDW64A BDW64B IC= -30mA; IB= 0 BDW64C BDW64D VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -12mA VCE(sat)-2 Collector-Emitter Saturation Volt...