BDW73B

isc Silicon NPN Darlington Power Transistor BDW73/A/B/C/D DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 750(Min.)@ IC= 3A ·Complement to Type BDW74/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW73 45 VCBO Collector-Base Voltage BDW73A 60 BDW73B 80 V BDW73C 100 BDW73D 120 BDW73 45 BDW73A 60 VCEO Collector-Emitter Voltage BDW73B 80 V BDW73C 100 BDW73D 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.3 A 2 W 80 150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW73 V(BR)CEO Collector-Emitter Breakdown Voltage BDW73A BDW73B IC= 30mA; IB=0 BDW73C BDW73D VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA V...