isc Silicon NPN Darlington Power Transistor
BDW73/A/B/C/D
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain...
isc Silicon
NPN Darlington Power
Transistor
BDW73/A/B/C/D
DESCRIPTION ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 750(Min.)@ IC= 3A ·Complement to Type BDW74/A/B/C/D ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDW73
45
VCBO
Collector-Base Voltage
BDW73A
60
BDW73B
80
V
BDW73C
100
BDW73D
120
BDW73
45
BDW73A
60
VCEO
Collector-Emitter Voltage
BDW73B
80
V
BDW73C
100
BDW73D
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
0.3
A
2 W
80
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.56 ℃/W
Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W
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isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW73
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW73A BDW73B IC= 30mA; IB=0 BDW73C
BDW73D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
V...