BDW83B

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 BDW83 45 VCEO Collector-Emitter Voltage BDW83A 60 BDW83B 80 BDW83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 IB Base Current-Continuous 0.5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3.5 150 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W BDW83/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW83 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW83A BDW83B IC= 30mA ;IB=0 60 80 V BDW83C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage...