BDW84D

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A 3.5 W 150 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.83 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W BDW84D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW84D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB=0 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -12mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A; IB= -150mA -4.0 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -3V -2.5 V ICEO Collector Cutoff Current ICBO Co...