BDW93

isc Silicon NPN Power Transistor BDW93/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C ·Complement to Type BDW94/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW93 45 VCBO Collector-Base Voltage BDW93A 60 V BDW93B 80 BDW93C 100 BDW93 45 VCEO Collector-Emitter Voltage BDW93A 60 V BDW93B 80 BDW93C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW93/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW93 CONDITIONS MIN TYP. MAX UNIT 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW93A BDW93B IC= 50mA; IB= 0 60 80 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-1 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 BDW93C Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base...