Document
isc Silicon NPN Power Transistor
BDW93/A/B/C
DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C
·Complement to Type BDW94/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for hammer drivers, audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDW93
45
VCBO
Collector-Base Voltage
BDW93A
60
V
BDW93B
80
BDW93C
100
BDW93
45
VCEO
Collector-Emitter Voltage
BDW93A
60
V
BDW93B
80
BDW93C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.2
A
80
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 1.5
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BDW93/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDW93
CONDITIONS
MIN TYP. MAX UNIT 45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDW93A BDW93B
IC= 50mA; IB= 0
60 80
V
VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-1
ICBO
ICEO
IEBO hFE-1 hFE-2 hFE-3
BDW93C
Collector-Emitter Voltage
Collector-Emitter Voltage
Saturation Saturation
Base-Emitter Saturation Voltage
IC= 5A; IB= 20mA IC= 10A; IB= 0.1A IC= 5A; IB= 20mA
Base-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
BDW93
VCB= 45V; IE= 0
Collector Cutoff Current
BDW93A BDW93B
VCB= 60V; IE= 0 VCB= 80V; IE= 0
BDW93C VCB= 100V; IE= 0
BDW93
VCE= 45V; IB= 0
Collector Cutoff Current
BDW93A BDW93B
VCE= 60V; IB= 0 VCE= 80V; IB= 0
BDW93C VCE= 100V; IB= 0
Emitter Cutoff Current
VEB= 5V; IC= 0
DC Current Gain
IC= 3A; VCE= 3V
DC Current Gain
IC= 5A; VCE= 3V
DC Current Gain
IC= 10A; VCE= 3V
100
2.0
V
3.0
V
2.5
V
4.0
V
0.1 mA
1000 750 100
1.0 mA
2.0 mA 2000
0
VECF-1 C-E Diode Forward Voltage
IF= 5A
2.0
V
VECF-2 C-E Diode Forward Voltage
IF= 10A
4.0
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifica.