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BDW93A Dataheets PDF



Part Number BDW93A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDW93A DatasheetBDW93A Datasheet (PDF)

isc Silicon NPN Power Transistor BDW93/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C ·Complement to Type BDW94/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW93 45 VCBO Collector-Base Vol.

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isc Silicon NPN Power Transistor BDW93/A/B/C DESCRIPTION ·Collector Current -IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93; 60V(Min)- BDW93A 80V(Min)- BDW93B; 100V(Min)- BDW93C ·Complement to Type BDW94/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hammer drivers, audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW93 45 VCBO Collector-Base Voltage BDW93A 60 V BDW93B 80 BDW93C 100 BDW93 45 VCEO Collector-Emitter Voltage BDW93A 60 V BDW93B 80 BDW93C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 80 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.5 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BDW93/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDW93 CONDITIONS MIN TYP. MAX UNIT 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDW93A BDW93B IC= 50mA; IB= 0 60 80 V VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-1 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 BDW93C Collector-Emitter Voltage Collector-Emitter Voltage Saturation Saturation Base-Emitter Saturation Voltage IC= 5A; IB= 20mA IC= 10A; IB= 0.1A IC= 5A; IB= 20mA Base-Emitter Saturation Voltage IC= 10A; IB= 0.1A BDW93 VCB= 45V; IE= 0 Collector Cutoff Current BDW93A BDW93B VCB= 60V; IE= 0 VCB= 80V; IE= 0 BDW93C VCB= 100V; IE= 0 BDW93 VCE= 45V; IB= 0 Collector Cutoff Current BDW93A BDW93B VCE= 60V; IB= 0 VCE= 80V; IB= 0 BDW93C VCE= 100V; IB= 0 Emitter Cutoff Current VEB= 5V; IC= 0 DC Current Gain IC= 3A; VCE= 3V DC Current Gain IC= 5A; VCE= 3V DC Current Gain IC= 10A; VCE= 3V 100 2.0 V 3.0 V 2.5 V 4.0 V 0.1 mA 1000 750 100 1.0 mA 2.0 mA 2000 0 VECF-1 C-E Diode Forward Voltage IF= 5A 2.0 V VECF-2 C-E Diode Forward Voltage IF= 10A 4.0 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifica.


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