BDX14

isc Silicon PNP Power Transistor BDX14 DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCER Collector-Emitter Voltage RBE= 100Ω -60 V VCEO Collector-Emitter Voltage -55 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A IB Base Current-Continuous -2 A PC Collector Power Dissipation@TC=25℃ 29 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~20 0 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current hFE DC Current Gain IC= -0.5A; VCE= -4V VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ IC= -0.5A; VCE= -4V fT Curre...