BDX65A

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000(Min)@ IC= 5A ·Complement to Type BDX64/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX65 80 VCBO Collector-Base Voltage BDX65A 100 V BDX65B 120 BDX65C 140 BDX65 60 VCEO Collector-Emitter Voltage BDX65A 80 BDX65B 100 V BDX65C 120 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 16 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 117 W 200 ℃ Tstg Storage Temperature Range -55~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.5 ℃/W BDX65/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX65/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDX65 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX65A BDX65B BDX65C VCE(sat) Collector-Emitter Saturation Voltage VBE(on) VECF Base-Emitter On Voltage C-E Diode Forward Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 hFE-2 DC Current Gain DC...