BDX66B

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX66 -80 VCBO Collector-Base Voltage BDX66A BDX66B -100 -120 BDX66C -140 BDX66 -60 VCEO Collector-Emitter Voltage BDX66A BDX66B -80 -100 BDX66C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -16 ICM Collector Current-Peak -20 IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.25 150 200 Tstg Storage Temperature Range -55~200 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.17 ℃/W BDX66/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX66A BDX66B IC= -50mA ;IB=0 -80 -100 V BDX66C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V VECF C-E Diode Forward V...