BDX67

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX67 80 BDX67A 100 VCBO Collector-Base Voltage BDX67B 120 BDX67C 140 BDX67 60 BDX67A 80 VCEO Collector-Emitter Voltage BDX67B 100 BDX67C 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 16 ICM Collector Current-Peak 20 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W BDX67/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX67 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX67A BDX67B IC= 50mA ; L= 25mH BDX67C VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA Base-Emitter On Voltage BDX67 Collector Cutoff Current BDX67A BDX67B BDX67C Collector Cutoff Current IC= 10A; VCE= 3V VCB= 80V; IE= 0 VCB= 80V; IE=...