isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A ·Low Saturatio...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX67
80
BDX67A
100
VCBO
Collector-Base Voltage
BDX67B
120
BDX67C
140
BDX67
60
BDX67A
80
VCEO
Collector-Emitter Voltage
BDX67B
100
BDX67C
120
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
16
ICM
Collector Current-Peak
20
IB
Base Current
250
PC
Collector Power Dissipation @ TC=25℃
150
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.17 ℃/W
BDX67/A/B/C
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Darlington Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX67
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX67A BDX67B
IC= 50mA ; L= 25mH
BDX67C
VCE(sat) VBE(on)
ICBO
ICEO
Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA
Base-Emitter On Voltage
BDX67
Collector Cutoff Current
BDX67A BDX67B
BDX67C
Collector Cutoff Current
IC= 10A; VCE= 3V
VCB= 80V; IE= 0 VCB= 80V; IE=...