BDX68B

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -20A ·Low Saturation Voltage ·Complement to Type BDX69/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX68 -80 VCBO Collector-Base Voltage BDX68A BDX68B -100 -120 BDX68C -140 BDX68 -60 VCEO BDX68A Collector-Emitter Voltage BDX68B -80 -100 BDX68C -120 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -25 ICM Collector Current-Peak -40 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -500 150 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.875 ℃/W BDX68/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX68/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX68 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX68A BDX68B IC= -50mA; L= 25mH BDX68C VCE(sat) Collector-Emitter Saturation Voltage IC= -20A; IB= -80mA VBE(on) ICBO Base-Emitter On Voltage BDX68 Collector Cutoff Current BDX68A BDX68B BDX68C BDX68 IC= -20A; VCE= -3V VCB= -80V; IE= 0 VCB= -40V; IE=...