BDX83

isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX83 45 BDX83A 60 VCBO Collector-Base Voltage BDX83B 80 BDX83C 100 BDX83 45 VCEO Collector-Emitter Voltage BDX83A 60 BDX83B 80 BDX83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX83 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX83A BDX83B IC= 50mA; IB= 0 60 V 80 VCE(sat) VBE(on)-1 BDX83C Collector-Emitter Voltage Saturation Base-Emitter On Voltage IC= 5A; IB= 10mA IC= 5A; VCE= 3V 100 2.0 V 2.8 V VBE(...