Document
isc Silicon NPN Darlington Power Transistor
BDX83/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX83
45
BDX83A
60
VCBO
Collector-Base Voltage
BDX83B
80
BDX83C 100
BDX83
45
VCEO
Collector-Emitter Voltage
BDX83A
60
BDX83B
80
BDX83C 100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
10
ICM
Collector Current-Peak
15
IB
Base Current
250
PC
Collector Power Dissipation @ TC=25℃
125
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc website:www.iscsemi.com
MAX UNIT 1.4 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BDX83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX83
45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX83A BDX83B
IC= 50mA; IB= 0
60 V
80
VCE(sat) VBE(on)-1
BDX83C
Collector-Emitter Voltage
Saturation
Base-Emitter On Voltage
IC= 5A; IB= 10mA IC= 5A; VCE= 3V
100 2.0 V 2.8 V
VBE(on)-2 ICEV
Base-Emitter On Voltage
BDX83
Collector Cutoff Current
BDX83A BDX83B
BDX83C
BDX83
IC= 10A; VCE= 3V
VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1.5V; TC= 150℃ VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; TC= 150℃ VCE= 80V; VBE= -1.5V VCE= 80V; VBE= -1.5V; TC= 150℃ VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V; TC= 150℃
VCE= 20V; IB=0
4.5 V
0.5 3.0
0.5
3.0 0.5
mA
3.0
0.5 3.0
ICEO
Collector Cutoff Current
BDX83A BDX83B
VCE= 30V; IB=0 VCE= 40V; IB=0
1.0 mA
BDX83C VCE= 50V; IB=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 3V
750
hFE-2
DC Current Gain
IC= 5A; VCE= 3V
1000
hFE-3
DC Current Gain
IC= 10A; VCE= 3V
250
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.com
2 isc & iscsemi is registered trademark
.