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BDX83A Dataheets PDF



Part Number BDX83A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDX83A DatasheetBDX83A Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX83 45 BDX83A 60.

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isc Silicon NPN Darlington Power Transistor BDX83/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDX83; 60V(Min)- BDX83A 80V(Min)- BDX83B; 100V(Min)- BDX83C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX83 45 BDX83A 60 VCBO Collector-Base Voltage BDX83B 80 BDX83C 100 BDX83 45 VCEO Collector-Emitter Voltage BDX83A 60 BDX83B 80 BDX83C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 10 ICM Collector Current-Peak 15 IB Base Current 250 PC Collector Power Dissipation @ TC=25℃ 125 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDX83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX83 45 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX83A BDX83B IC= 50mA; IB= 0 60 V 80 VCE(sat) VBE(on)-1 BDX83C Collector-Emitter Voltage Saturation Base-Emitter On Voltage IC= 5A; IB= 10mA IC= 5A; VCE= 3V 100 2.0 V 2.8 V VBE(on)-2 ICEV Base-Emitter On Voltage BDX83 Collector Cutoff Current BDX83A BDX83B BDX83C BDX83 IC= 10A; VCE= 3V VCE= 45V; VBE= -1.5V VCE= 45V; VBE= -1.5V; TC= 150℃ VCE= 60V; VBE= -1.5V VCE= 60V; VBE= -1.5V; TC= 150℃ VCE= 80V; VBE= -1.5V VCE= 80V; VBE= -1.5V; TC= 150℃ VCE= 100V; VBE= -1.5V VCE= 100V; VBE= -1.5V; TC= 150℃ VCE= 20V; IB=0 4.5 V 0.5 3.0 0.5 3.0 0.5 mA 3.0 0.5 3.0 ICEO Collector Cutoff Current BDX83A BDX83B VCE= 30V; IB=0 VCE= 40V; IB=0 1.0 mA BDX83C VCE= 50V; IB=0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 5.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 3V 750 hFE-2 DC Current Gain IC= 5A; VCE= 3V 1000 hFE-3 DC Current Gain IC= 10A; VCE= 3V 250 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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