BDX84

isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 -45 BDX84A -60 VCBO Collector-Base Voltage BDX84B -80 BDX84C -100 BDX84 -45 VCEO Collector-Emitter Voltage BDX84A -60 BDX84B -80 BDX84C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -250 125 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX84 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX84A BDX84B IC= -50mA; IB= 0 BDX84C VCE(sat) VBE(on)-1 VBE(on)-2 ICEV Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BDX84 Collector Cutoff Current ...