DatasheetsPDF.com

BDX84B Dataheets PDF



Part Number BDX84B
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BDX84B DatasheetBDX84B Datasheet (PDF)

isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 -45 BDX8.

  BDX84B   BDX84B


Document
isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 -45 BDX84A -60 VCBO Collector-Base Voltage BDX84B -80 BDX84C -100 BDX84 -45 VCEO Collector-Emitter Voltage BDX84A -60 BDX84B -80 BDX84C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -250 125 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A mA W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website:www.iscsemi.com MAX UNIT 1.4 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX84 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX84A BDX84B IC= -50mA; IB= 0 BDX84C VCE(sat) VBE(on)-1 VBE(on)-2 ICEV Collector-Emitter Saturation Voltage Base-Emitter On Voltage Base-Emitter On Voltage BDX84 Collector Cutoff Current BDX84A BDX84B BDX84C BDX84 IC= -5A; IB= -10mA IC= -5A; VCE= -3V IC= -10A; VCE= -3V VCE= -45V; VBE= 1.5V VCE= -45V; VBE= 1.5V; TC= 150℃ VCE= -60V; VBE= 1.5V VCE= -60V; VBE= 1.5V; TC= 150℃ VCE= -80V; VBE= 1.5V VCE= -80V; VBE= 1.5V; TC= 150℃ VCE= -100V; VBE= 1.5V VCE= -100V; VBE= 1.5V; TC= 150℃ VCE= -20V; IB= 0 ICEO Collector Cutoff Current BDX84A BDX84B VCE= -30V; IB= 0 VCE= -40V; IB= 0 BDX84C VCE= -50V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -3V hFE-2 DC Current Gain IC= -5A; VCE= -3V hFE-3 DC Current Gain IC= -10A; VCE= -3V MIN -45 -60 -80 -100 750 1000 250 TYP. MAX UNIT V -2.0 V -2.8 V -4.5 V -0.5 -3.0 -0.5 -3.0 -0.5 mA -3.0 -0.5 -3.0 -1.0 mA -5.0 mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BDX84A BDX84B BDX84C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)