isc Silicon PNP Darlington Power Transistor
BDX86/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -3A ·C...
isc Silicon
PNP Darlington Power
Transistor
BDX86/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A -80V(Min)- BDX86B; -100V(Min)- BDX86C
·Complement to Type BDX85/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BDX86
-45
BDX86A
-60
VCBO
Collector-Base Voltage
BDX86B
-80
BDX86C -100
BDX86
-45
VCEO
Collector-Emitter Voltage
BDX86A
-60
BDX86B
-80
BDX86C -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-15
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-100 100 200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V A A mA W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.75 ℃/W
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isc Silicon
PNP Darlington Power
Transistor
BDX86/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX86
-45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX86A BDX86B
IC= -50mA; IB= 0
-60 -80
V
BDX86C
-100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A; IB= -16mA
-2.0
V
VCE(sat)-2 Collector-...