BU307F

isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BU306F 600 VCBO Collector-Base Voltage V BU307F 700 BU306F 300 VCEO Collector-Emitter Voltage V BU307F 400 VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 4 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.12 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage BU306F BU307F IC= 50mA ;IB= 0 300 V 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A ...