isc Silicon NPN Power Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= ...
isc Silicon
NPN Power
Transistors
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
BUW132
850
VCES
Collector- Emitter Voltage(VBE= 0)
V
BUW132A
1000
BUW132
450
VCEO
Collector-Emitter Voltage
V
BUW132A
500
VEBO IC ICM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
6
V
8
A
16
A
125
W
150
℃
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W
BUW132/A
·
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BUW132 BUW132A
IC= 50mA ; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
BUW132 IC= 3A; IB= 0.4A BUW132A IC= 3A; IB= 0.6A
VCE(sat)-2
Collector-Emitter Saturation Voltage
BUW132 IC= 5A; IB= 0.66A BUW132A IC= 5A; IB= 1A
VBE(sat)
ICBO IEBO
Base-Emitter Saturation Voltage
BUW132 IC= 5A; IB= 0.66A BUW132A IC= 5A; IB= 1A
Collector-Base Cutoff Current
VCB=VCB...