BUW132A

isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT BUW132 850 VCES Collector- Emitter Voltage(VBE= 0) V BUW132A 1000 BUW132 450 VCEO Collector-Emitter Voltage V BUW132A 500 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 6 V 8 A 16 A 125 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W BUW132/A · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUW132 BUW132A IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage BUW132 IC= 3A; IB= 0.4A BUW132A IC= 3A; IB= 0.6A VCE(sat)-2 Collector-Emitter Saturation Voltage BUW132 IC= 5A; IB= 0.66A BUW132A IC= 5A; IB= 1A VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage BUW132 IC= 5A; IB= 0.66A BUW132A IC= 5A; IB= 1A Collector-Base Cutoff Current VCB=VCB...