BUX16A

isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators, power amplifiers, Inverters , deflection circuits , switching regulators, and high voltage bridge amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BUX16 250 VCBO Collector-Base Voltage BUX16A 325 BUX16B 375 BUX16C 425 BUX16 200 BUX16A 250 VCEO(SUS) Collector-Emitter Voltage BUX16B 300 BUX16C 350 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 5 IB Base Current-Continuous 2 PC Collector Power Dissipation@TC=25℃ 100 TJ Junction Temperature 200 Tstg Storage Temperature -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.75 UNIT ℃/W BUX16/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX16/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BUX16 CONDITIONS MIN TYP. MAX UNI T 200 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX16A BUX16B IC=50mA ; IB= 0 250 V 300 BUX16C 350 BUX16 225 VCBO(SUS) Collector-Emitter Sustaining Voltage BUX16A BUX16B IC= 1mA ; IE= 0 3...