BUX17C

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C ·High Switching Speed ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BUX17 250 VCEV Collector-Emitter Voltage VBE= -1.5V BUX17A BUX17B 350 400 BUX17C 450 BUX17 150 BUX17A 250 VCEO(SUS) Collector-Emitter Voltage BUX17B 300 BUX17C 350 VEBO Emitter-Base Voltage 6 IC Collector Current-Continuous 10 IB Base Current-Continuous 2 PC Collector Power Dissipation@TC=25℃ 150 TJ Junction Temperature 200 Tstg Storage Temperature -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W BUX17/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX17/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX17 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX17A BUX17B IC= 50mA ; IB= 0 BUX17C V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage BUX17/A ...