BUX46A

isc Silicon NPN Power Transistors DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUX46 450V (Min)-BUX46A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUX46 850 V BUX46A 1000 VCEO Collector-Emitter Voltage BUX46 400 V BUX46A 450 VEBO IC ICM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 5 V 3.5 A 5 A 85 W 175 ℃ -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W BUX46/A · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUX46 BUX46A IC= 50mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.5A ; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.7A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCB=VCESmax; I...