BUX67B

isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUX67 200 BUX67A 300 VCBO Collector-Base Voltage V BUX67B 350 BUX67C 400 BUX67 150 BUX67A 250 VCEO Collector-Emitter Voltage V BUX67B 300 BUX67C 350 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2.0 A ICP Collector Current-Peak 5.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 35 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ BUX67/A/B/C isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BUX67/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUX67 VCEO(SUS) Collector-Emitter Sustaining Voltage BUX67A BUX67B IC=50mA ; IB=0 BUX67C VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.15A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.15A BUX67 VCB= 150V; IE= 0 ICBO Collector Cutoff Current BUX67A VCB= 250V; IE= 0 ...