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BUX67C

NPN Transistor

Description

isc Silicon NPN Power Transistors DESCRIPTION ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for...

INCHANGE

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