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BDX53B Dataheets PDF



Part Number BDX53B
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet BDX53B DatasheetBDX53B Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor BDX53B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER .

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isc Silicon NPN Darlington Power Transistor BDX53B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= 80V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Collector Saturation Voltage : VCE(sat) = 2.0 V(Max) @ IC = 3.0 A ·Complement to Type BDX54B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP Collector Current-Peak 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 12mA VECF C-E Diode Forward Voltage IF= 3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 ICEO Collector Cutoff Current VCE= 40V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 3V BDX53B MIN TYP. MAX UNIT 80 V 2.0 V 2.5 V 2.5 V 0.2 mA 0.5 mA 2.0 mA 750 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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