isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·Complement to...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·Complement to Type BDX78F ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in hi-fi equipment delivering an output
of 15 to 15 W into a 4Ωor 8Ωload.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
80
V
5
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak s
12
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
32
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 6.3 ℃/W
BDX77F
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ;IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 2V
ICEO
Collector Cutoff Current
ICB...