BDY44

isc Silicon NPN Power Transistor BDY44 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 1A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 5A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulator ·Inverter ·Switching mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 750 V VCES Collector-Emitter Voltage 750 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE-1 DC Current Gain IC= 5A; IB= 1.5A VCB= 750V; IE= 0 VCB= 750V; IE= 0, TC=150℃ IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 5A; VCE= 2V fT ...