BDY72

isc Silicon NPN Power Transistor BDY72 DESCRIPTION ·Contunuous Collector Current-IC= 3A ·Collector Power Dissipation- : PC= 25W @TC= 25℃ Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose switching and linear amplifier applications requiring high breakdown voltages. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VCEX Collector-Emitter Voltage VBE= -1.5V 150 V VCER Collector-Emitter Voltage RBE= 100Ω 130 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 2 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 7.0 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 140V; IB= 0 VCE= 130V; VBE...