isc Silicon PNP Power Transistor
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation-
: PC= ...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector Power Dissipation-
: PC= 36W @TC= 25℃ ·Complement to Type BDY81 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation@TC=25℃
36
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 3.5 ℃/W
BDY83
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -5V
ICEO
Collector Cutoff Current
VCE= -20V; IB= 0
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE...