BU108

isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1300 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 3.5 A IE Emitter Current-Continuous PC Collector Power Dissipation @VCE≤100V,TC≤95℃ TJ Junction Temperature 8.5 A 12.5 W 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.6 ℃/W BU108 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A ICEX Collector Cutoff Current VCE= 1300V; VBE= -2V ICBO Collector Cutoff Current VCB= 1300V; IE= 0 hFE DC Current Gain IC= 4.5A ; VCE= 5V tf Fall Time IC= 4.5A BU108 MIN MAX UNIT 5 V 5.0 V 1.3 V 1.0 mA 1.0 mA 4 1.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the d...