BU109

isc Silicon NPN Power Transistor BU109 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150 V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output stage of TVs and CRTs applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage- VBE= -1.5V 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak(Repetitive) 10 A ICM Collector Current-Peak(t= 10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation@TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.08 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current I...